Tunable superconducting neurons for networks based on radial basis functions

• Andrey E. Schegolev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Igor I. Soloviev,
• Mikhail Yu. Kupriyanov,
• Maxim V. Tereshonok and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2022, 13, 444–454, doi:10.3762/bjnano.13.37

• broadband group signal is extremely important. Also, probabilistic analysis is used in the consideration of stochastic processes [1][2][3][4], as a popular machine learning method for spatial interpolation of non-stationary and non-Gaussian data [5], as a central part of a compensation block to enhance the

Amorphized length and variability in phase-change memory line cells

• Nafisa Noor,
• Sadid Muneer,
• Raihan Sayeed Khan,
• Anna Gorbenko and
• Helena Silva

Beilstein J. Nanotechnol. 2020, 11, 1644–1654, doi:10.3762/bjnano.11.147

• unpredictable programming feature in phase-change memory devices can be utilized in hardware security applications. Keywords: amorphous materials; drift; electrical breakdown; electrical resistivity; phase-change memory; pulse measurement; stochastic processes; threshold switching; Introduction Phase-change

Noise in NC-AFM measurements with significant tip–sample interaction

• Jannis Lübbe,
• Matthias Temmen,
• Philipp Rahe and
• Michael Reichling

Beilstein J. Nanotechnol. 2016, 7, 1885–1904, doi:10.3762/bjnano.7.181

• consider the signal phase in this work, as we are interested in noise that is a result of stochastic processes. However, the frequency response functions Hi(iω) are treated as transfer functions Hi(s) using the complex frequency variable s = σ + iω to calculate step responses from an inverse Laplace